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STM32L010K4 датащи(PDF) 45 Page - STMicroelectronics

номер детали STM32L010K4
подробное описание детали  Value line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, 16-Kbyte Flash memory, 2-Kbyte SRAM, 128-byte EEPROM, ADC
PDF  91 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L010K4 датащи(HTML) 45 Page - STMicroelectronics

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DS12323 Rev 3
45/91
STM32L010F4/K4
Electrical characteristics
81
Figure 10. IDD vs VDD, Run mode, code running from Flash memory, Range 2, HSE bypass, 1 ws
MSv48133V1
Table 21. Current consumption in Run mode, code with data processing running from RAM
Symbol
Parameter
Conditions
fHCLK
(MHz)
Typ
Max(1)
Unit
IDD (Run
from
RAM)
Supply current in
Run mode, code
executed from
RAM, Flash
memory
switched OFF
fHSE = fHCLK up to 16 MHz,
included
fHSE = fHCLK/2 above 16 MHz
(PLL ON)(2)
Range 3,
VCORE =1.2 V,
VOS[1:0] = 11
1
115
140
µA
2
205
240
4
385
420
Range 2,
VCORE = 1.5 ,V,
VOS[1:0] = 10
4
0.48
0.55
mA
8
0.935
1.1
16
1.8
2
Range 1,
VCORE =1.8 V,
VOS[1:0] = 01
81.1
1.4
16
2.1
2.5
32
4.5
4.9
MSI clock
Range 3,
VCORE =1.2 V,
VOS[1:0] = 11
0.065
22
38
µA
0.524
67
91
4.2
415
450
IDD (Run
from
RAM)
Supply current in
Run mode, code
executed from
RAM, Flash
memory
switched OFF
HSI16 clock source (16 MHz)
Range 2,
VCORE =1.5 V,
VOS[1:0] = 10
16
1.95
2.2
mA
Range 1,
VCORE =1.8 V,
VOS[1:0] = 01
32
4.7
5.2
1. Guaranteed by characterization results at 85 °C, not tested in production, unless otherwise specified.



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