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STM32WB15CC датащи(PDF) 98 Page - STMicroelectronics

номер детали STM32WB15CC
подробное описание детали  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5.2 radio solution
PDF  127 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32WB15CC датащи(HTML) 98 Page - STMicroelectronics

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Electrical characteristics
STM32WB15CC
98/127
DS13258 Rev 4
Table 64. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
I/O input
low level voltage(1)
1.71 V < VDD < 3.6 V
-
-
0.3 x VDD
V
I/O input
low level voltage(1)
0.39 x VDD - 0.06
VIH
I/O input
high level voltage(1)
0.7 x VDD
--
I/O input
high level voltage(1)
0.49 x VDD + 0.26
-
-
Vhys
TT, FT_xxx
and NRST I/O
input hysteresis
-
200
-
mV
Ilkg
FT_xx input
leakage current
0 ≤ VIN ≤ Max(VDDXXX)(2)
-
-
±100
nA
Max(VDDXXX) ≤ VIN ≤
Max(VDDXXX) +1 V(1)(2)(3)
--
650
Max(VDDXXX) +1 V < VIN ≤
5.5 V(1)(2)(3)(4)(5)
--
200(6)
TT input
leakage current
VIN ≤ Max(VDDXXX)(2)
-
-
±150
Max(VDDXXX) ≤ VIN < 3.6 V(2)
-
-
2000
RPU
Weak pull-up
equivalent resistor(1)
VIN = VSS
25
40
55
kΩ
RPD
Weak pull-down
equivalent resistor(1)
VIN = VDD
25
40
55
CIO
I/O pin capacitance
-
-
5
-
pF
1. Specified by design, not tested in production.
2. Represents the pad leakage of the I/O itself. The total product pad leakage is given by
ITotal_Ileak_max = 10 μA + number of I/Os where VIN is applied on the pad x Ilkg(Max).
3. Max(VDDXXX) is the maximum value among all the I/O supplies.
4. VIN must be lower than [Max(VDDXXX) + 3.6 V].
5. Refer to Figure 20: I/O input characteristics.
6. To sustain a voltage higher than min(VDD, VDDA) + 0.3 V, the internal pull-up and pull-down resistors must be disabled. All
FT_xx IO except PC3.



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