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STM32WB15CC датащи(PDF) 88 Page - STMicroelectronics |
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STM32WB15CC датащи(HTML) 88 Page - STMicroelectronics |
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88 / 127 page ![]() Electrical characteristics STM32WB15CC 88/127 DS13258 Rev 4 6.3.10 Internal clock source characteristics The parameters given in Table 52 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator VLSEH OSC32_IN input pin high level voltage - 0.7 VDDx -VDDx V VLSEL OSC32_IN input pin low level voltage -VSS - 0.3 VDDx tw(LSEH) tw(LSEL) OSC32_IN high or low time - 250 - - ns ftolLSE Frequency tolerance Includes initial accuracy, stability over temperature, aging and frequency pulling -500 - +500 ppm 1. Specified by design, not tested in production. Table 51. Low-speed external user clock characteristics(1) – Bypass mode Symbol Parameter Conditions Min Typ Max Unit Table 52. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 frequency VDD = 3.0 V, TA= 30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) Duty cycle - 45 - 55 ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA = 0 to 85 °C -1 - 1 TA = –40 to 125 °C -2 - 1.5 ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD = 1.62 V to 3.6 V -0.1 - 0.05 tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5 IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Evaluated by characterization, not tested in production. 2. Specified by design, not tested in production. |
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