STM32WB15CC datasheet(79/127 Pages) STMICROELECTRONICS

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Table 40. Current consumption in Shutdown mode

Symbol

Parameter

Conditions

TYP

MAX(1)

1. Evaluated by characterization (mean ± 4 σ), not tested in production, unless otherwise specified.

Unit

-VDD

0 °C

25 °C

40 °C

55 °C

85 °C 105 °C

0 °C

25 °C

85 °C 105 °C

IDD

(Shutdown)

Supply current

in Shutdown

mode (backup

registers

retained) RTC

disabled

1.8 V

5.00

12.0

31.0

74.0

365

990

1207

3148

2.4 V

10.0

18.0

41.0

93.0

440

1200

3.0 V

16.0

28.0

58.0

125

560

1500

140

1495

3874

3.6 V

34.0

54.0

99.0

190

745

1900

143

1788

4339

IDD

(Shutdown

with RTC)

Supply current

in Shutdown

mode (backup

registers

retained) RTC

enabled

RTC clocked

by LSE



quartz (2) in

low drive

mode

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

1.8 V

310

330

355

405

710

1350

2295

1948

3627

2.4 V

405

425

455

515

875

1650

3.0 V

525

550

585

660

1100

2050

2310

2193

4635

3.6 V

680

710

760

860

1450

2600

2283

2704

5463

Table 41. Current consumption in VBAT mode

Symbol Parameter

Conditions

TYP

MAX(1)

1. Evaluated by characterization (mean ± 4 σ), not tested in production, unless otherwise specified.

Unit

-VBAT 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 0 °C

25 °C

40 °C

55 °C

85 °C 105 °C

IDD

(VBAT)

Backup

domain

supply

current

RTC

disabled

1.8 V

1.00

4.00

11.0

54.0

145

2.4 V

1.00

2.00

5.00

13.0

62.0

165

3.0 V

1.00

3.00

8.00

19.0

88.0

245

3.6 V

2.00

6.00

15.0

33.0

145

375

RTC

enabled

and

clocked

by LSE

quartz(2)

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

1.8 V

200

210

220

235

290

385

2.4 V

250

265

275

285

350

460

3.0 V

315

330

340

360

440

605

3.6 V

405

415

430

455

580

820

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