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STM32WB15CC датащи(PDF) 86 Page - STMicroelectronics

номер детали STM32WB15CC
подробное описание детали  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5.2 radio solution
PDF  127 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32WB15CC датащи(HTML) 86 Page - STMicroelectronics

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Electrical characteristics
STM32WB15CC
86/127
DS13258 Rev 4
Note:
For information about the trimming of the oscillator refer to AN5165 “Development of RF
hardware using STM32WB microcontrollers”, available on www.st.com.
Low-speed external user clock generated from an external source
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. The information provided in this section is based on design simulation results
obtained with typical external components specified in Table 50. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins to minimize output distortion and startup stabilization time.
Refer to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
Table 49. HSE oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tSUA(HSE)
Startup time
for 80% amplitude stabilization
VDDRF stabilized, XOTUNE=000000, 
–40 to +125 °C range
-
1000
-
µs
tSUR(HSE)
Startup time
for XOREADY signal
VDDRF stabilized, XOTUNE=000000, 
–40 to +125 °C range
-250
-
IDDRF(HSE) HSE current consumption
HSEGMC=000, XOTUNE=000000
-
50
-
µA
XOTg(HSE) XOTUNE granularity
Capacitor bank
-1
5
ppm
XOTfp(HSE) XOTUNE frequency pulling
±20
±40
-
XOTnb(HSE) XOTUNE number of tuning bits
-
6
-
bit
XOTst(HSE) XOTUNE setting time
-
-
0.1
ms
Table 50. Low-speed external user clock characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD(LSE)
LSE current consumption
LSEDRV[1:0] = 00
Low drive capability
-250
-
nA
LSEDRV[1:0] = 01
Medium low drive capability
-315
-
LSEDRV[1:0] = 10
Medium high drive capability
-500
-
LSEDRV[1:0] = 11
High drive capability
-630
-
Gmcritmax Maximum critical crystal gm
LSEDRV[1:0] = 00
Low drive capability
-
-
0.50
µA / V
LSEDRV[1:0] = 01
Medium low drive capability
-
-
0.75
LSEDRV[1:0] = 10
Medium high drive capability
-
-
1.70
LSEDRV[1:0] = 11
High drive capability
-
-
2.70
tSU(LSE)(2) Startup time
VDD stabilized
-
2
-
s



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