STM32WB15CC datasheet(68/127 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32WB15CC

68/127

DS13258 Rev 4

6.3.5

Embedded reset and power control block characteristics

The parameters given in Table 29 are derived from tests performed under the ambient

temperature conditions summarized in Table 21: General operating conditions.

Table 29. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

tRSTTEMPO(2)

Reset temporization after BOR0 is detected VDD rising

250

400

μs

VBOR0(2)

Brown-out reset threshold 0

Rising edge

1.62

1.66

1.70

Falling edge

1.60

1.64

1.69

VBOR1

Brown-out reset threshold 1

Rising edge

2.06

2.10

2.14

Falling edge

1.96

2.00

2.04

VBOR2

Brown-out reset threshold 2

Rising edge

2.26

2.31

2.35

Falling edge

2.16

2.20

2.24

VBOR3

Brown-out reset threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VBOR4

Brown-out reset threshold 4

Rising edge

2.85

2.90

2.95

Falling edge

2.76

2.81

2.86

VPVD0

Programmable voltage detector threshold 0

Rising edge

2.10

2.15

2.19

Falling edge

2.00

2.05

2.10

VPVD1

PVD threshold 1

Rising edge

2.26

2.31

2.36

Falling edge

2.15

2.20

2.25

VPVD2

PVD threshold 2

Rising edge

2.41

2.46

2.51

Falling edge

2.31

2.36

2.41

VPVD3

PVD threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VPVD4

PVD threshold 4

Rising edge

2.69

2.74

2.79

Falling edge

2.59

2.64

2.69

VPVD5

PVD threshold 5

Rising edge

2.85

2.91

2.96

Falling edge

2.75

2.81

2.86

VPVD6

PVD threshold 6

Rising edge

2.92

2.98

3.04

Falling edge

2.84

2.90

2.96

Vhyst_BORH0

Hysteresis voltage of BORH0

Hysteresis in

continuous mode

-20

Hysteresis in

other mode

-30

Vhyst_BOR_PVD

Hysteresis voltage of BORH (except

BORH0) and PVD

100

IDD (BOR_PVD)(2)

BOR(3) (except BOR0) and PVD

consumption from VDD

1.1

1.6

µA

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