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STM32G0 датащи(PDF) 80 Page - STMicroelectronics |
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STM32G0 датащи(HTML) 80 Page - STMicroelectronics |
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80 / 135 page ![]() Electrical characteristics STM32G071x8/xB 80/135 DS12232 Rev 4 5.3.14 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 51 are derived from tests performed under the conditions summarized in Table 21: General operating conditions. All I/Os are designed as CMOS- and TTL-compliant. Table 51. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL(1) I/O input low level voltage All except FT_c 1.62 V < VDDIO1 < 3.6 V - - 0.3 x VDDIO1 (2) V 0.39 x VDDIO1 - 0.06 (3) FT_c 2.7 V < VDDIO1 < 3.6 V - - 0.3 x VDDIO1 1.62 V < VDDIO1 < 2.7 V - - 0.25 x VDDIO1 VIH(1) I/O input high level voltage All except FT_c 1.62 V < VDDIO1 < 3.6 V 0.7 x VDDIO1( 2) -- V 0.49 x VDDIO1 + 0.26(3) -- FT_c 1.62 V < VDDIO1 < 3.6 V 0.7 x VDDIO1 -5 Vhys(3) I/O input hysteresis TT_xx, FT_xx, NRST 1.62 V < VDDIO1 < 3.6 V - 200 - mV Ilkg Input leakage current(3) FT_xx except FT_c and FT_d 0 < VIN ≤ VDDIO1 -- ±70 nA VDDIO1 ≤ VIN ≤ VDDIO1+1 V - - 600(4) VDDIO1 +1 V < VIN ≤ 5.5 V(3) - - 150(4) FT_c 0 < VIN ≤ VDDIO1 - - 2000 VDDIO1 < VIN ≤ 5 V - - 3000(4) FT_d 0 < VIN ≤ VDDIO1 - - 4500 VDDIO1 < VIN ≤ 5.5 V - - 9000(4) TT_a 0 < VIN ≤ VDDIO1 -- ±150 VDDIO1 < VIN ≤ VDDIO1 + 0.3 V - - 2000(4) RPU Weak pull-up equivalent resistor (5) VIN = VSS 25 40 55 kΩ RPD Weak pull-down equivalent resistor(5) VIN = VDDIO1 25 40 55 kΩ CIO I/O pin capacitance - - 5 - pF 1. Refer to Figure 21: I/O input characteristics. 2. Tested in production. 3. Guaranteed by design. |
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