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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32G0 датащи(PDF) 73 Page - STMicroelectronics |
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STM32G0 датащи(HTML) 73 Page - STMicroelectronics |
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73 / 135 page  DS12232 Rev 4 73/135 STM32G071x8/xB Electrical characteristics 107 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 19. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 5.3.8 Internal clock source characteristics The parameters given in Table 41 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer MS30253V2 OSC32_IN OSC32_OUT Drive programmable amplifier fLSE 32.768 kHz resonator Resonator with integrated capacitors CL1 CL2 Table 41. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA= 0 to 85 °C -1 - 1 % TA= -40 to 125 °C -2 - 1.5 % ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.62 V to 3.6 V -0.1 - 0.05 % TRIM HSI16 frequency user trimming step From code 127 to 128 -8 -6 -4 % From code 63 to 64 From code 191 to 192 -5.8 -3.8 -1.8 For all other code increments 0.2 0.3 0.4 DHSI16(2) Duty Cycle - 45 - 55 % tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs |
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