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STM32G0 датащи(PDF) 64 Page - STMicroelectronics |
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STM32G0 датащи(HTML) 64 Page - STMicroelectronics |
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64 / 135 page ![]() Electrical characteristics STM32G071x8/xB 64/135 DS12232 Rev 4 ∆IDD(SRAM) Extra supply current to retain SRAM content(3) SRAM retention enabled 1.8 V 0.49 3.0 14.8 0.6 16 58 µA 2.4 V 0.57 3.1 14.9 1.1 17 63 3.0 V 0.67 3.2 15.0 1.5 17 67 3.6 V 0.77 3.3 15.0 1.9 18 71 1. Based on characterization results, not tested in production. 2. Without SRAM retention and with ULPEN bit set 3. To be added to IDD(Standby) as appropriate Table 30. Current consumption in Standby mode (continued) Symbol Parameter Conditions Typ Max(1) Unit General VDD 25°C 85°C 125°C 25°C 85°C 130°C Table 31. Current consumption in Shutdown mode Symbol Parameter Conditions Typ Max(1) Unit RTC VDD 25 °C 85 °C 125 °C 25 °C 85 °C 130 °C IDD(Shutdown) Supply current in Shutdown mode Disabled 1.8 V 17 515 4500 250 3000 32600 nA 2.4 V 23 600 5150 450 3500 33600 3.0 V 33 730 6450 1075 4250 37400 3.6 V 53 940 7700 1250 5300 43600 Enabled, clocked by LSE bypass at 32.768 kHz 1.8 V 205 710 4700 900 4500 27300 2.4 V 300 890 5500 1550 5500 34800 3.0 V 420 1150 6800 2475 6000 40900 3.6 V 565 1450 8100 3250 7000 48500 1. Based on characterization results, not tested in production. Table 32. Current consumption in VBAT mode Symbol Parameter Conditions Typ Unit RTC VDD 25°C 85°C 125°C IDD(VBAT) Supply current in VBAT mode Enabled, clocked by LSE bypass at 32.768 kHz 1.8 V 165 170 620 nA 2.4 V 260 355 970 3.0 V 365 475 1200 3.6 V 505 655 2070 Enabled, clocked by LSE crystal at 32.768 kHz 1.8 V 290 390 960 2.4 V 370 480 1150 3.0 V 470 600 1650 3.6 V 600 815 2250 Disabled 1.8 V 1 80 660 2.4 V 2 90 750 3.0 V 2 105 1200 3.6 V 6 200 1700 |
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