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STM32G0 датащи(PDF) 76 Page - STMicroelectronics |
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STM32G0 датащи(HTML) 76 Page - STMicroelectronics |
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76 / 135 page ![]() Electrical characteristics STM32G071x8/xB 76/135 DS12232 Rev 4 5.3.11 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: • Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. • FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in Table 46. They are based on the EMS levels and classes defined in application note AN1709. IDD(FlashA) Average consumption from VDD Programming 3 - mA Page erase 3 - Mass erase 3 - IDD(FlashP) Maximum current (peak) Programming, 2 µs peak duration 7- mA Erase, 41 µs peak duration 7 - 1. Guaranteed by design. 2. Values provided also apply to devices with less Flash memory than one 128 Kbyte bank Table 44. Flash memory characteristics(1) (continued) Symbol Parameter Conditions Typ Max Unit Table 45. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) Unit NEND Endurance TA = -40 to +105 °C 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 30 Years 1 kcycle(2) at TA = 105 °C 15 1 kcycle(2) at TA = 125 °C 7 10 kcycles(2) at TA = 55 °C 30 10 kcycles(2) at TA = 85 °C 15 10 kcycles(2) at TA = 105 °C 10 1. Guaranteed by characterization results. 2. Cycling performed over the whole temperature range. |
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