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STM32F730V8 датащи(PDF) 127 Page - STMicroelectronics |
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STM32F730V8 датащи(HTML) 127 Page - STMicroelectronics |
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127 / 202 page ![]() DS12536 Rev 2 127/202 STM32F730x8 Electrical characteristics 185 6.3.15 USB HS PHY external resistor characteristics 6.3.16 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Table 51. USB HS PHY external resistor characteristics Symbol Parameter Conditions Min Typ Max Unit REXT External calibration resistor connected (to GND) from OTG_HS_REXT Required if using USB HS PHY 2.97 3.00 3.03 k Ω Table 52. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode, VDD = 1.7 V - 6.7 - mA Write / Erase 16-bit mode, VDD = 2.1 V - 9.2 - Write / Erase 32-bit mode, VDD = 3.3 V - 12.6 - Table 53. Flash memory programming Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog Word programming time Program/erase parallelism (PSIZE) = x 8/16/32 -16 100(2) µs tERASE16KB Sector (16 KB) erase time Program/erase parallelism (PSIZE) = x 8 - 346 418 ms Program/erase parallelism (PSIZE) = x 16 - 252 312 Program/erase parallelism (PSIZE) = x 32 - 208 265 tERASE128KB Sector (128 KB) erase time Program/erase parallelism (PSIZE) = x 8 - 1953 2500 ms Program/erase parallelism (PSIZE) = x 16 - 1252 1639 Program/erase parallelism (PSIZE) = x 32 - 927 1322 tERASE64KB Sector (64 KB) erase time Program/erase parallelism (PSIZE) = x 8 - 1027 1298 ms Program/erase parallelism (PSIZE) = x 16 - 675 840 Program/erase parallelism (PSIZE) = x 32 - 505 682 |
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