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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F730V8 датащи(PDF) 119 Page - STMicroelectronics |
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STM32F730V8 датащи(HTML) 119 Page - STMicroelectronics |
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119 / 202 page  DS12536 Rev 2 119/202 STM32F730x8 Electrical characteristics 185 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST Microelectronics website www.st.com. Figure 31. Typical application with a 32.768 kHz crystal Gm_crit_max Maximum critical crystal gm LSEDRV[1:0]=00 Low drive capability - - 0.48 µA/V LSEDRV[1:0]=10 Medium low drive capability - - 0.75 LSEDRV[1:0]=01 Medium high drive capability -- 1.7 LSEDRV[1:0]=11 High drive capability -- 2.7 tSU(2) start-up time VDD is stabilized - 2 - s 1. Guaranteed by design. 2. Guaranteed by characterization results. tSU is the start-up time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. Table 41. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) (continued) Symbol Parameter Conditions Min Typ Max Unit ai17531a OSC32_ OU T OSC32_ IN fLSE C L1 R F STM32F 32.768 kHz resonator Resonator with integrated capacitors Bias controlled gain C L2 |
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