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STM32F730V8 датащи(PDF) 115 Page - STMicroelectronics

номер детали STM32F730V8
подробное описание детали  Arm® Cortex®-M7 32b MCUFPU, 462DMIPS, 64KB Flash /256164KB RAM, USB OTG HS/FS, 18 TIMs, 3 ADCs, 21 com IF
PDF  202 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32F730V8 датащи(HTML) 115 Page - STMicroelectronics

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DS12536 Rev 2
115/202
STM32F730x8
Electrical characteristics
185
6.3.9
External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 61: I/O static characteristics. However, the
recommended clock input waveform is shown in Figure 28.
The characteristics given in Table 38 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 16.
tWUSTOP(2)
Wakeup from Stop mode
with MR/LP regulator in
Under-drive mode
Main regulator in under-drive mode
(Flash memory in Deep power-down
mode)
107.4
113.2
µs
Low power regulator in under-drive
mode
(Flash memory in Deep power-down
mode)
112.7
120
tWUSTDBY(2)
Wakeup from Standby
mode
Exit Standby mode on rising edge
308
313
µs
Exit Standby mode on falling edge
307
313
1. Guaranteed by characterization results.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first
Table 37. Low-power mode wakeup timings (continued)
Symbol
Parameter
Conditions
Typ(1)
Max(1)
Unit
Table 38. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSE_ext
External user clock source
frequency(1)
-
1-
50
MHz
VHSEH
OSC_IN input pin high level voltage
0.7VDD
-VDD
V
VHSEL
OSC_IN input pin low level voltage
VSS
-0.3VDD
tw(HSE)
tw(HSE)
OSC_IN high or low time(1)
1. Guaranteed by design.
5-
-
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1)
--
10
Cin(HSE) OSC_IN input capacitance(1)
--
5
-
pF
DuCy(HSE) Duty cycle
-
45
-
55
%
IL
OSC_IN Input leakage current
VSS ≤ VIN ≤ VDD
--
±1
µA



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