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MMPF0200Z датащи(PDF) 52 Page - NXP Semiconductors

номер детали MMPF0200Z
подробное описание детали  12 Channel Configurable Power Management Integrated Circuit
PDF  118 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMPF0200Z датащи(HTML) 52 Page - NXP Semiconductors

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Analog Integrated Circuit Device Data
52
Freescale Semiconductor
PF0200Z
Functional Block Requirements and Behaviors
Power Generation
Figure 14. SW2 Efficiency Waveforms
SWITCH MODE SUPPLY SW2 (CONTINUED)
Transient Load Regulation
• Transient load = 0.0 mA to 1.0 A, di/dt = 100 mA/
s
Overshoot
Undershoot
VSW2LOTR
50
50
mV
Quiescent Current
PFM Mode
APS Mode (Low output voltage settings)
APS Mode (High output voltage settings)
ISW2Q
23
145
305
µA
SW2 P-MOSFET RDSON
at VIN = VINSW2 = 3.3 V
RONSW2P
190
209
m
SW2 N-MOSFET RDSON
at VIN = VINSW2 = 3.3 V
RONSW2N
212
255
m
SW2 P-MOSFET Leakage Current
VIN = VINSW2 = 4.5 V
ISW2PQ
––
12
µA
SW2 N-MOSFET Leakage Current
VIN = VINSW2 = 4.5 V
ISW2NQ
––
4.0
µA
Discharge Resistance
RSW2DIS
600
Notes
41.
When output is set to > 2.6 V the output will follow the input down when VIN gets near 2.8 V.
42.
The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation:
(VINSW2 - VSW2) = ISW2* (DCR of Inductor +RONSW2P + PCB trace resistance).
Table 56. SW2 Electrical Characteristics (continued)
All parameters are specified at TA = -40 to 85 °C, VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA,
SW2_PWRSTG[2:0] = [111], typical external component values, fSW2 = 2.0 MHz, unless otherwise noted. Typical values are
characterized at VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], and 25 °C, unless otherwise
noted.
Parameter
Symbol
Min
Typ
Max
Unit
0
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
1000
Ef
fi
ci
e
n
cy
 (%
)
Load Current (mA)
PFM ‐ Vout = 3.15V
APS ‐ Vout = 3.15V
PWM ‐ Vout = 3.15V



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