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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M58LT128GS датащи(PDF) 48 Page - STMicroelectronics |
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M58LT128GS датащи(HTML) 48 Page - STMicroelectronics |
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48 / 98 page  9 Program and Erase times and Endurance cycles M58LT128GST, M58LT128GSB 48/98 Erase Parameter Block (16 KWord) 0.4 2.5 s Main Block (64 KWord) 1 4 s Program(3) Single Cell Word Program 30 60 µs Single Word Word Program 85 170 µs Buffer Enhanced Factory Program(4) 10 µs Buffer (32 Words) Buffer Program 340 680 µs Buffer Enhanced Factory Program 320 µs Main Block (64 KWords) Buffer Program 640 ms Buffer Enhanced Factory Program 640 ms Bank (16 Mbits) Buffer Program 10 s Buffer Enhanced Factory Program 10 s Program/Erase Cycles (per Block) Main Blocks 1000 cycles Parameter Blocks 2500 cycles 1. TA = –25 to 85°C; VDD = 1.7V to 2V; VDDQ = 2.7 to 3.6V. 2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 3. Excludes the time needed to execute the command sequence. 4. This is an average value on the entire device. Parameter Condition(1)(2) Min Typ Typical after 100kW/E Cycles Max Unit |
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