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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M58LT128GS датащи(PDF) 75 Page - STMicroelectronics |
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M58LT128GS датащи(HTML) 75 Page - STMicroelectronics |
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75 / 98 page  M58LT128GST, M58LT128GSB 13 Part Numbering 75/98 Table 39. Device Geometry Definition 023h 0001h Maximum time-out for word program = 2n times typical 512µs 024h 0001h Maximum time-out for Buffer Program = 2n times typical 1024µs 025h 0002h Maximum time-out per individual block erase = 2n times typical 4s 026h 0000h Maximum time-out for chip erase = 2n times typical NA Offset Data Description Value 027h 0018h Device Size = 2n in number of bytes 16 MBytes 028h 029h 0001h 0000h Flash Device Interface Code description x16 Async. 02Ah 02Bh 0006h 0000h Maximum number of bytes in multi-byte program or page = 2n 64 Bytes 02Ch 0002h Number of identical sized erase block regions within the device bit 7 to 0 = x = number of Erase Block Regions 2 02Dh 02Eh 007Eh 0000h Erase Block Region 1 Information Number of identical-size erase blocks = 007Eh+1 127 02Fh 030h 0000h 0002h Erase Block Region 1 Information Block size in Region 1 = 0200h * 256 Byte 128 KByte 031h 032h 0003h 0000h Erase Block Region 2 Information Number of identical-size erase blocks = 0003h+1 4 033h 034h 0080h 0000h Erase Block Region 2 Information Block size in Region 2 = 0080h * 256 Byte 32 KByte 035h 038h Reserved Reserved for future erase block region information NA 02Dh 02Eh 0003h 0000h Erase Block Region 1 Information Number of identical-size erase block = 0003h+1 4 02Fh 030h 0080h 0000h Erase Block Region 1 Information Block size in Region 1 = 0080h * 256 bytes 32 KBytes 031h 032h 007Eh 0000h Erase Block Region 2 Information Number of identical-size erase block = 007Eh+1 127 033h 034h 0000h 0002h Erase Block Region 2 Information Block size in Region 2 = 0200h * 256 bytes 128 KBytes 035h 038h Reserved Reserved for future erase block region information NA Offset Data Description Value |
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