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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M58LT128GS датащи(PDF) 82 Page - STMicroelectronics |
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M58LT128GS датащи(HTML) 82 Page - STMicroelectronics |
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82 / 98 page  13 Part Numbering M58LT128GST, M58LT128GSB 82/98 1. The variable P is a pointer which is defined at CFI offset 015h. 2. Bank Regions. There are two Bank Regions, see Table 30 to Table 32 for the M58LT128GST and Table 33 to Table 35 for the M58LT128GSB. (P+44)h = 14Eh 64h Bank Region 2 (Erase Block Type 2) Minimum block erase cycles × 1000 (P+45)h = 14Fh 00h (P+46)h = 150h 02h Bank Region 2 (Erase Block Type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved (P+47)h = 151h 03h Bank Region 2 (Erase Block Type 2): Page mode and Synchronous mode capabilities (defined in Table 42) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved (P+48)h = 152h (P+48)h = 152h Feature Space definitions (P+49)h = 153h (P+43)h = 153h Reserved Flash memory (top) Flash memory (bottom) Description Offset Data Offset Data |
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