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M58LT128GS датащи(PDF) 74 Page - STMicroelectronics |
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M58LT128GS датащи(HTML) 74 Page - STMicroelectronics |
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74 / 98 page ![]() 13 Part Numbering M58LT128GST, M58LT128GSB 74/98 Table 37. CFI Query Identification String Table 38. CFI Query System Interface Information Offset Sub-section Name Description Value 000h 0020h Manufacturer Code ST 001h 88C6h 88C7h Device Code M58LT128GST M58LT128GSB Top Bottom 002h reserved Reserved 003h DRC Die Revision Code 004h-00Fh reserved Reserved 010h 0051h Query Unique ASCII String "QRY" "Q" 011h 0052h "R" 012h 0059h "Y" 013h 0001h Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm 014h 0000h 015h offset = P = 000Ah Address for Primary Algorithm extended Query table (see Table 40) p = 10Ah 016h 0001h 017h 0000h Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported NA 018h 0000h 019h value = A = 0000h Address for Alternate Algorithm extended Query table NA 01Ah 0000h Offset Data Description Value 01Bh 0017h VDD Logic Supply Minimum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 1.7V 01Ch 0020h VDD Logic Supply Maximum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 2V 01Dh 0085h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 8.5V 01Eh 0095h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 9.5V 01Fh 0008h Typical time-out per single byte/word program = 2n µs 256µs 020h 0009h Typical time-out for Buffer Program = 2n µs 512µs 021h 000Ah Typical time-out per individual block erase = 2n ms 1s 022h 0000h Typical time-out for full chip erase = 2n ms NA |
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