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M58LT128GS датащи(PDF) 52 Page - STMicroelectronics

номер детали M58LT128GS
подробное описание детали  128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
PDF  98 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LT128GS датащи(HTML) 52 Page - STMicroelectronics

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11 DC and AC parameters
M58LT128GST, M58LT128GSB
52/98
Table 20.
DC Characteristics - Currents
Symbol
Parameter
Test Condition
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤V
IN ≤VDDQ
±1
µA
ILO
Output Leakage Current
0V
≤V
OUT ≤VDDQ
±1
µA
IDD1
Supply Current
Asynchronous Read (f=5MHz)
E = VIL, G = VIH
13
15
mA
Supply Current
Synchronous Read (f=52MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
23
25
mA
Continuous
25
27
mA
IDD2
Supply Current
(Reset)
RP = VSS ± 0.2V
25
70
µA
IDD3
Supply Current (Standby)
E = VDD ± 0.2V
25
70
µA
IDD4
Supply Current (Automatic Standby)
E = VIL, G = VIH
25
70
µA
IDD5
(1)
1.
Sampled only, not 100% tested.
Supply Current (Program)
VPP = VPPH
815
mA
VPP = VDD
10
20
mA
Supply Current (Erase)
VPP = VPPH
815
mA
VPP = VDD
10
20
mA
IDD6
(1)(2)
2.
VDD Dual Operation current is the sum of read and program or erase currents.
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in another
Bank
23
35
mA
Program/Erase in one Bank,
Synchronous Read (Continuous
f=52MHz) in another Bank
35
47
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDD ± 0.2V
25
70
µA
IPP1
(1)
VPP Supply Current (Program)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
µA
VPP Supply Current (Erase)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
µA
IPP2
VPP Supply Current (Read)
VPP ≤VDD
0.2
5
µA
IPP3
(1)
VPP Supply Current (Standby)
VPP ≤VDD
0.2
5
µA



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