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LTC4244IGN датащи(PDF) 23 Page - Linear Technology |
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LTC4244IGN датащи(HTML) 23 Page - Linear Technology |
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23 / 28 page ![]() 23 LTC4244/LTC4244-1 42441f the PC board. For 1 ounce copper foil plating, a general rule is 1 ampere of DC current per via making sure the via is properly dimensioned so that solder completely fills the void. For other plating thicknesses, check with your PCB fabrication facility. Design Example As a design example, consider a CPCI Hot Swap applica- tion with the following power supply requirements: Table 4. Design Example Power Supply Requirements VOLTAGE MAXIMUM DC LOAD SUPPLY SUPPLY CURRENT CAPACITANCE 12V 450mA 100 µF 5V 5A 2200 µF 3.3V 7A 2200 µF –12V 100mA 100 µF The first step is to select the appropriate values of RSENSE for the 5V and 3.3V supplies. Calculating the value of RSENSE is based on ILOAD(MAX) and the lower limit for the circuit breaker threshold voltage (47mV for both the 5V and 3.3V circuit breakers). If a 1% tolerance is assumed for the sense resistors, then 5m Ω and 7mΩ resistor values yield the following minimum and maximum ITRIP values: Table 5. ITRIP vs RSENSE RSENSE (1% RTOL) ITRIP(MIN) ITRIP(MAX) 5m Ω 9.3A 11.5A 7m Ω 6.6A 8.2A So sense resistor values of 7m Ω and 5mΩ should suffice for the 5V and 3.3V supplies, respectively. The second step is to select MOSFETs for the 5V and 3.3V supplies. The IRF7457’s on resistance is less than 10.5m Ω for VGS > 4.5V and a junction temperature of 25°C. Since the maximum load current requirement for the 3.3V sup- ply is 7A, the steady-state power the device may be required to dissipate is 514mW. The IRF7457 has a junction-to-ambient thermal resistance of 50 °C/Watt. If a maximum ambient temperature of 50 °C is assumed, this yields a junction temperature of 75.7 °C. According to the IRF7457’s Normalized On-Resistance vs Junction Tem- perature curve, the device’s on-resistance can be expected to increase by about 20% over its room temperature value. Recalculation of the steady-state values of RON and junc- tion temperature yields approximately 12.6m Ω and 81°C, respectively. The I • R drop across the 3.3V sense resistor and series MOSFET at maximum load current under these conditions will be less than 124mV. The next step is to select appropriate values for C1 and CTIMER. Assuming that the total current for the 5V supply is constrained to less than 6A during power-up (6 × 5V medium length connector pins at 1A per pin), then the inrush current shouldn’t exceed: IINRUSH < 6A – ILOAD(5VOUT) = 6A – 5A = 1A (12) This yields: C IF I C AF A nF GATE MAX INRUSH MAX 1 2200 1 100 2200 1 220 > µ ⇒> µµ = () () • • (13) Hence a C1 value of 330nF ±10% should suffice. The value of CTIMER for this design example will be constrained by the duration of the 12V supply inrush current, which according to Equation 2 is: t CV II t FV mA mA ms ON VOUT LOAD LIMIT MIN LOAD MAX ON VOUT () () ( ) () •• – •• – 12 12 212 2 100 12 550 450 24 < ⇒< µ = (14) In order to guarantee that the LTC4244’s TIMER fault inhibit period is greater than 24ms, the value of CTIMER should be: C ms I VV C ms A VV nF TIMER TIMER MAX TIMER MAX TIMER > ⇒> µ = 24 12 24 26 12 1 9 61 8 • – • –. . () () (15) So a value of 82nF ( ±10%) should suffice. APPLICATIO S I FOR ATIO |
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