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LTC4244IGN датащи(PDF) 14 Page - Linear Technology |
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LTC4244IGN датащи(HTML) 14 Page - Linear Technology |
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14 / 28 page ![]() 14 LTC4244/LTC4244-1 42441f Once the power-down sequence is complete, the CPCI card may be removed from the slot. During extraction, the precharge circuit continues to bias the bus I/O connector pins at 1V until the long 5V and 3.3V connector pin connections are broken. GATE Pin Capacitor Selection Both the load capacitance and the LTC4244’s GATE pin capacitor (C1 in Figure 1) affect the ramp rate of the 5VOUT and 3.3VOUT voltages. The precise relationship can be expressed as: dV or = I or = I OUT LIMIT(5V) LIMIT(3.3V) dt I C I C I C GATE LOAD V LOAD VOUT LOAD V LOAD VOUT = 1 5 5 33 33 – – () () (. ) (. ) (1) whichever is slowest. The power-up time for any of the LTC4244’s outputs where the inrush current is constrained by that supply’s foldback current limit can be approxi- mated as: t CV II on VOUT LOAD OUT LIMIT VOUT LOAD VOUT () () () •• – n nn n < 2 (2) Where nVOUT = 5VOUT, 3.3VOUT, 12VOUT or VEEOUT. For example, if CLOAD=2000µF, ILIMIT(5VOUT) = 6A and ILOAD(5VOUT) = 5A, the 5VOUT turn-on time will be less than 20ms. If the value of C1 is large enough that it alone determines the output voltage ramp rate, then the magnitude of the inrush current initially charging the load capacitance is: I C C I INRUSH LOAD GATE = 1 • (3) The maximum power-up time for this condition can be approximated by: t V V C MAX I ON OUT TH MOSFET MAX GATE MIN < + () ,( ) () •( ) 1 (4) where VTH,MOSFET(MAX) is the maximum threshold voltage of the external 5V or 3.3V MOSFET. In general, the edge rate (dI/dt) at which the back-end 5V and 3.3V supply currents are turned on can be limited by increasing the size of C1. Applications that are sensitive to the edge rate should characterize how varying the size of C1 reduces dI/dt for the external MOSFET selected for a particular design. In the event of a short-circuit or overcurrent condition, the LTC4244’s GATE pin can be pulled down within 2 µs since a 1k Ω (R5 in Figure 1) decouples C1 from the gates of the external MOSFET’s (Q1 and Q2 in Figure 1). TIMER Pin Capacitor Selection During a power-up sequence, a 21 µA current source is connected to the TIMER pin and current limit faults are ignored until the voltage ramps to within 1.6V of 12VIN. This feature allows the part to power up large capacitive loads using its foldback current limit. The TIMER inhibit period can be expressed as: t CV V I TIMER TIMER IN TIMER TIMER = () •– 12 (5) The timer period should be set longer than the duration of any inrush current that exceeds the LTC4244’s foldback current limit but yet be short enough not to exceed the maximum, safe operating area of the external 5V and 3.3V pass transistors in the event of a short circuit (see Design Example). As a design aid, the TIMER period as a function of the timing capacitor using standard values from 0.1 µF to 0.82 µF is shown in Table 1. APPLICATIO S I FOR ATIO |
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