DSM2180F3 datasheet(19/63 Pages) STMICROELECTRONICS

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DSM2180F3

Table 5. Instruction Sequences1,2,3,4

Note: 1. All values are in hexadecimal, X = Don’t Care

2. A desired internal Flash memory sector select signal (FS0 - FS7) must be active for each write or read cycle. Only one of FS0 - FS7

will be active at any given time depending on the address presented by the DSP and the memory mapping defined in PSDsoft Ex-

press. FS0 - FS7 are active high logic internally.

3. DSP addresses A17 through A12 are Don’t Care during the instruction sequence decoding. Only address bits A11-A0 are used

during Flash memory instruction sequence decoding bus cycles. The individual sector select signal (FS0 - FS7) which is active dur-

ing the instruction sequences determines the complete address.

4. For write operations, addresses are latched on the falling edge of Write Strobe (WR, CNTL0), Data is latched on the rising edge of

Write Strobe (WR, CNTL0)

5. No Unlock or Instruction cycles are required when the device is in the Read Array mode. Operation is like reading a ROM device.

6. The Reset Flash instruction is required to return to the normal Read Array mode if the Error Flag (DQ5) bit goes High, or after read-

ing the Flash Identifier or after reading the Sector Protection Status.

7. The DSP cannot invoke this instruction sequence while executing code from the same Flash memory as that for which the instruc-

tion sequence is intended. The DSP must fetch, for example, the code from the DSP SRAM when reading the Flash memory Iden-

tifier or Sector Protection Status.

8. The data is 00h for an unprotected sector, and 01h for a protected sector. In the fourth cycle, the Sector Select is active, and

(A1,A0)=(1,0)

9. Directing this command to any individual active Flash memory segment (FS0 - FS7) will invoke the bulk erase of all eight Flash

memory sectors.

10. DSP writes command sequece to initial segment to be erased, then writes the byte 30h to additional sectors to be erased. The byte

30h must be addressed to one of the other Flash memory segments (FS0 - FS7) for each additional segment (write 30h to any

address within a desired sector). No more than 80uS can elapse between subsequent additional sector erase commands.

11. The system may perform Read and Program cycles in non-erasing sectors, read the Flash ID or read the Sector Protect Status,

when in the Suspend Sector Erase mode. The Suspend Sector Erase instruction sequence is valid only during a Sector Erase cycle.

12. The Resume Sector Erase instruction sequence is valid only during the Suspend Sector Erase mode.

Instruction

Sequence

Cycle 1

Cycle 2

Cycle 3

Cycle 4

Cycle 5

Cycle 6

Cycle 7

Read Memory

Contents5

Read byte

from any

valid Flash

memory addr

Read Flash

Identifier6,7

Write AAh to

XX555h

Write 55h

to XXAAAh

Write 90h

to XX555h

Read identifier

with addr lines

A6,A1,A0 =

0,0,1

Read Memory

Sector Protection

Status6,7,8

Write AAh to

XX555h

Write 55h

to XXAAAh

Write 90h

to XX555h

Read identifier

with addr lines

A6,A1,A0 =

0,1,0

Program a Flash

Byte

Write AAh to

XX555h

Write 55h

to XXAAAh

Write A0h

to XX555h

Write

(program)

data to addr

Flash Bulk Erase9

Write AAh to

XX555h

Write 55h

to XXAAAh

Write 80h

to XX555h

Write AAh to

XX555h

Write 55h

to XXAAAh

Write 10h

to XX555h

Flash Sector

Erase10

Write AAh to

XX555h

Write 55h

to XXAAAh

Write 80h

to XX555h

Write AAh to

XX555h

Write 55h

to XXAAAh

Write 30h

to another

Sector

Write 30h

to another

Sector

Suspend Sector

Erase11

Write B0h to

address that

activates any

of FS0 - FS7

Resume Sector

Erase12

Write 30h to

addr that

activates any

of FS0 - FS7

Reset Flash6

Write F0h to

address that

activates any

of FS0 - FS7

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