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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PC97338 датащи(PDF) 197 Page - National Semiconductor (TI) |
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PC97338 датащи(HTML) 197 Page - National Semiconductor (TI) |
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197 / 221 page  197 www.national.com 8.0 Device Description 8.1 GENERAL ELECTRICAL CHARACTERISTICS 8.1.1 Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Note 1: Absolute maximum ratings indicate limits beyond which permanent damage may occur. Continuous operation at these limits is not intended; operation should be limited to those conditions specified under Electri- cal Characteristics. Note 2: Value Based on test complying with NSC SOP5-028 human body model ESD testing using the ETS- 910 tester. Note 3: Unless otherwise specified all voltages are referenced to ground. 8.1.2 Capacitance TABLE 108. Capacitance: TA 0°C to 70°C, VDD = 5V +/- 10% or 3.3V +/- 10%, VSS = 0V 8.1.3 Electrical Characteristics TABLE 109. Power Consumption Supply Voltage (VDD) -0.5V to + 7.0V Input Voltage (VI) -0.5 to VDD + 0.5V Output Voltage (VO)-0.5 to VDD + 0.5V Storage Temperature (TSTG) -65 °C to + 165°C Power Dissipation (PD)1W Lead Temperature (TL) (Soldering, 10 seconds) +260 °C ESD Tolerance (Note 2) 2000V min. CZAP 100 pF RZAP 1.5 k Ω Symbol Parameter Test Conditions Min Typ Max Units CIN Input Pin Capacitance 5 7 pF CICLK Clock Input Capacitance 8 10 pF CIO I/O Pin Capacitance f = 1 MHz 10 12 pF CO Output Pin Capacitance f = 1 MHz 6 8 pF Symbol Parameter Test Conditions Min Typ Max Units ICC VDD Average Supply Current VDD = 5V, VIL = 0.5V, VIH = 2.4V, No Load 20 50 mA VDD = 3.3V, VIL = 0.5V, VIH = 2.4V, No Load 12 35 mA ICCSB VDD Quiescent Supply Current in Low Power Mode VDD = 5V, VIL = 0.5V, VIH = 2.4V, No Load 400 µA VDD = 3.3V, VIL = 0.5V, VIH = 2.4V, No Load 200 µA |
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