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FREQ датащи(PDF) 33 Page - fujitsu semiconductor |
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FREQ датащи(HTML) 33 Page - fujitsu semiconductor |
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33 / 56 page ![]() 33 MB39A214A Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00007-1v0-E Selection of Switching FET If selecting the high-side FET so that the value of the high-side FET conduction loss and the high-side FET switching loss is same, the loss is effectively decreased. Confirm that the high-side FET loss is within the rating value. PMainFET = PRON_Main + PSW_Main PMainFET : High-side FET loss [W] PRON_Main : High-side FET conduction loss [W] PSW_Main : High-side FET switching loss [W] High-side FET conduction loss VOUT PRON_Main = IOUT_MAX 2 VIN RON_Main PRON_Main : High-side FET conduction loss [W] IOUT_MAX : Maximum load current [A] VIN : Power supply voltage [V] VOUT : Output voltage [V] RON_Main : ON resistance of high-side FET [Ω] The high-side FET switching loss can be calculated roughly by the following formula. PSW_Main 1.56 VIN fOSC IOUT_MAX QSW PSW_Main : Switching loss [W] VIN : Power supply voltage [V] fOSC : Switching frequency [Hz] IOUT_MAX : Maximum load current [A] QSW : Amount of high-side FET gate switch electric charge [C] MOSFET has a tendency where the gate drive loss increases because the lower drive voltage product has the bigger amount of gate electric charge (QG). Normally, we recommend a 4 V drive product, however, the idle period at light load (both the high-side FET and the low-side FET is off-period) gets longer and the gate drive voltage of the high-side FET may decrease, in the automatic PFM/PWM selection mode. The voltage drops most at no-load mode. At this time, confirm that the boost voltage (voltage between BST-LX pins) is a big enough value for the gate threshold value voltage of the high-side FET. If it is not enough, consider adding the boost diode, increasing the capacitor value of the boost capacitor or using a 2.5 V (or 1.8 V) drive product to the high-side FET. Select the ON resistance of low-side FET from the range below. 0.2 0.1 0.015 RON_Sync ≤ ΔIL , RON_Sync ≤ ΔIL , RON_Sync ≥ ΔIL (ILIM − 2 ) RON_Sync : ON resistance of low-side FET [Ω] ΔIL : Ripple current peak-to-peak value of inductor [A] ILIM : Over current detection value [A] |
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