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FREQ датащи(PDF) 33 Page - fujitsu semiconductor

номер детали FREQ
подробное описание детали  2ch DC/DC converter IC with PFM/ PWM synchronous rectification
PDF  56 Pages
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производитель  FUJITSU [fujitsu semiconductor]
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FREQ датащи(HTML) 33 Page - fujitsu semiconductor

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MB39A214A
Limitation : development tool vendor use only
FUJITSU SEMICONDUCTOR CONFIDENTIAL
DS405-00007-1v0-E
Selection of Switching FET
If selecting the high-side FET so that the value of the high-side FET conduction loss and the high-side FET
switching loss is same, the loss is effectively decreased.
Confirm that the high-side FET loss is within the rating value.
PMainFET = PRON_Main + PSW_Main
PMainFET
: High-side FET loss [W]
PRON_Main : High-side FET conduction loss [W]
PSW_Main
: High-side FET switching loss [W]
High-side FET conduction loss
VOUT
PRON_Main = IOUT_MAX
2
VIN
RON_Main
PRON_Main : High-side FET conduction loss [W]
IOUT_MAX : Maximum load current [A]
VIN
: Power supply voltage [V]
VOUT
: Output voltage [V]
RON_Main : ON resistance of high-side FET [Ω]
The high-side FET switching loss can be calculated roughly by the following formula.
PSW_Main
1.56
VIN
fOSC
IOUT_MAX
QSW
PSW_Main : Switching loss [W]
VIN
: Power supply voltage [V]
fOSC
: Switching frequency [Hz]
IOUT_MAX : Maximum load current [A]
QSW
: Amount of high-side FET gate switch electric charge [C]
MOSFET has a tendency where the gate drive loss increases because the lower drive voltage product has
the bigger amount of gate electric charge (QG). Normally, we recommend a 4 V drive product, however, the
idle period at light load (both the high-side FET and the low-side FET is off-period) gets longer and the gate
drive voltage of the high-side FET may decrease, in the automatic PFM/PWM selection mode. The voltage
drops most at no-load mode. At this time, confirm that the boost voltage (voltage between BST-LX pins) is
a big enough value for the gate threshold value voltage of the high-side FET.
If it is not enough, consider adding the boost diode, increasing the capacitor value of the boost capacitor or
using a 2.5 V (or 1.8 V) drive product to the high-side FET.
Select the ON resistance of low-side FET from the range below.
0.2
0.1
0.015
RON_Sync
ΔIL
, RON_Sync
ΔIL
, RON_Sync
ΔIL
(ILIM
2
)
RON_Sync
: ON resistance of low-side FET [Ω]
ΔIL
: Ripple current peak-to-peak value of inductor [A]
ILIM
: Over current detection value [A]



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