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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FREQ датащи(PDF) 36 Page - fujitsu semiconductor |
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FREQ датащи(HTML) 36 Page - fujitsu semiconductor |
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36 / 56 page  36 MB39A214A Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00007-1v0-E Selection of fly-back diode This device is improved by adding the fly-back diode when the conversion efficiency improvement or the suppression of the low-side FET fever is desired, although those are unnecessary to execute normally. The effect is achieved in the condition where the switching frequency is high or output voltage is lower. Select schottky barrier diode (SBD) that the forward current is as small as possible. In this DC/DC control IC, the period for the electric current flow into fly-back diode is limited to dead time period because the synchronous rectification system is adopted. (as for the dead time, see “Output Block” in “ELECTRICAL CHARACTERISTICS”). Each rating for the fly-back diode can be calculated by the following formula. ID ≥ IOUT_MAX fOSC (tD1 + tD2) ID : Forward current rating of SBD [A] IOUT_MAX : Maximum load current [A] fOSC : Switching frequency [Hz] tD1, tD2 : Dead time [s] ΔIL IFSM ≥ IOUT_MAX + 2 IFSM : Peak forward surge current ratings of SBD [A] IOUT_MAX : Maximum load current [A] ΔIL : Ripple current peak-to-peak value of inductor [A] VR_Fly > VIN VR_Fly : Reverse voltage of fly-back diode direct current [V] VIN : Power supply voltage [V] |
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