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STM32F031X4 датащи(PDF) 43 Page - STMicroelectronics |
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STM32F031X4 датащи(HTML) 43 Page - STMicroelectronics |
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43 / 106 page ![]() DocID025743 Rev 4 43/106 STM32F031x4 STM32F031x6 Electrical characteristics 80 6.3.4 Embedded reference voltage The parameters given in Table 22 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 18: General operating conditions. 6.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 13: Current consumption measurement scheme. VPVD4 PVD threshold 4 Rising edge 2.47 2.58 2.69 V Falling edge 2.37 2.48 2.59 V VPVD5 PVD threshold 5 Rising edge 2.57 2.68 2.79 V Falling edge 2.47 2.58 2.69 V VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 V Falling edge 2.56 2.68 2.8 V VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 V Falling edge 2.66 2.78 2.9 V VPVDhyst(1) PVD hysteresis - 100 - mV IDD(PVD) PVD current consumption - 0.15 0.26(1) µA 1. Guaranteed by design, not tested in production. Table 21. Programmable voltage detector characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 22. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.2 1.25 V tSTART ADC_IN17 buffer startup time -- - 10(1) µs tS_vrefint ADC sampling time when reading the internal reference voltage - 4(1) 1. Guaranteed by design, not tested in production. -- µs ΔVREFINT Internal reference voltage spread over the temperature range VDDA = 3 V - - 10(1) mV TCoeff Temperature coefficient - - 100(1) - 100(1) ppm/°C |
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