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STM32F031X4 датащи(PDF) 42 Page - STMicroelectronics |
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STM32F031X4 датащи(HTML) 42 Page - STMicroelectronics |
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42 / 106 page ![]() Electrical characteristics STM32F031x4 STM32F031x6 42/106 DocID025743 Rev 4 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 19 are derived from tests performed under the ambient temperature condition summarized in Table 18. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 20 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 18: General operating conditions. Table 19. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 20 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 20 ∞ Table 20. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPOR/PDR(1) 1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector monitors only VDD. Power on/power down reset threshold Falling edge(2) 2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.80 1.88 1.96(3) 3. Data based on characterization results, not tested in production. V Rising edge 1.84(3) 1.92 2.00 V VPDRhyst PDR hysteresis - - 40 - mV tRSTTEMPO(4) 4. Guaranteed by design, not tested in production. Reset temporization - 1.50 2.50 4.50 ms Table 21. Programmable voltage detector characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD0 PVD threshold 0 Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 V VPVD1 PVD threshold 1 Rising edge 2.19 2.28 2.37 V Falling edge 2.09 2.18 2.27 V VPVD2 PVD threshold 2 Rising edge 2.28 2.38 2.48 V Falling edge 2.18 2.28 2.38 V VPVD3 PVD threshold 3 Rising edge 2.38 2.48 2.58 V Falling edge 2.28 2.38 2.48 V |
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