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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F031X4 датащи(PDF) 65 Page - STMicroelectronics |
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STM32F031X4 датащи(HTML) 65 Page - STMicroelectronics |
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65 / 106 page  DocID025743 Rev 4 65/106 STM32F031x4 STM32F031x6 Electrical characteristics 80 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 20 for standard I/Os, and in Figure 21 for 5 V tolerant I/Os. The following curves are design simulation results, not tested in production. RPU Weak pull-up equivalent resistor (3) VIN = VSS 25 40 55 k Ω RPD Weak pull-down equivalent resistor(3) VIN = VDDIOx 25 40 55 k Ω CIO I/O pin capacitance - - 5 - pF 1. Data based on design simulation only. Not tested in production. 2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 45: I/O current injection susceptibility. 3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). Table 46. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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