PIC16F628-20SLASHSS datasheet(134/160 Pages) MICROCHIP

134 / 160 page

PIC16F62X

DS40300B-page 134

Preliminary

17.1

DC CHARACTERISTICS:

PIC16F62X-04 (Commercial, Industrial, Extended)

PIC16F62X-20 (Commercial, Industrial, Extended)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

–40

°C ≤ TA ≤ +85°C for industrial and

°C ≤ TA ≤ +70°C for commercial and

–40

°C ≤ TA ≤ +125°C for extended

Param

No.

Sym

Characteristic

Min

Typ† Max Units

Conditions

D001

VDD

Supply Voltage

3.0

5.5

D002

VDR

RAM Data Retention

Voltage (Note 1)

–

1.5*

–

Device in SLEEP mode

D003

VPOR

VDD start voltage to

ensure Power-on Reset

–

Vss

–

See section on power-on reset for details

D004

SVDD

VDD rise rate to ensure

Power-on Reset

0.05*

–

V/ms

See section on power-on reset for details

D005

VBOD

Brown-out Detect Voltage

3.7

4.0

4.3

4.4

BODEN configuration bit is cleared

(Extended)

D010

D013

IDD

Supply Current (Note 2, 5)

–

4.0

–

0.7

7.0

6.0

2.0

FOSC = 4.0 MHZ, VDD = 3.0

FOSC = 20.0 MHz, VDD = 5.5

FOSC = 20.0 MHz, VDD = 4.5

FOSC = 10.0 MHz, VDD = 3.0

D020

IPD

Power Down Current (Note 3)

–

2.2

5.0

9.0

15.0

µA

VDD = 3.0

VDD = 4.5

VDD = 5.5

VDD = 5.5 Extended

D023

∆IWDT

∆IBOD

∆ICOMP

∆IVREF

WDT Current (Note 4)

Brown-out Detect Current (Note 4)

Comparator Current for each

Comparator (Note 4)

VREF Current (Note 4)

–

6.0

125

135

µA

VDD=4.0V

(125

°C)

BOD enabled, VDD = 5.0V

VDD = 4.0V

FOSC

LP Oscillator Operating Frequency

INTRC Oscillator Operating Frequency

XT Oscillator Operating Frequency

HS Oscillator Operating Frequency

–

200

KHz

MHz

All temperatures

These parameters are characterized but not tested.

†

Data in "Typ" column is at 5.0V, 25

°C, unless otherwise stated. These parameters are for design guidance only and are

not tested.

Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and

switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-

sumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,

MCLR = VDD; WDT enabled/disabled as specified.

3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with

the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.

4: The

∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the

base IDD or IPD measurement.

5: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the

formula Ir = VDD/2Rext (mA) with Rext in k

Ω.

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