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AN2784 датащи(PDF) 18 Page - STMicroelectronics |
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AN2784 датащи(HTML) 18 Page - STMicroelectronics |
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18 / 31 page ![]() Interfacing with a nonmultiplexed, asynchronous 16-bit SRAM AN2784 18/31 Doc ID 14779 Rev 4 Hence the following equations: ((ADDSET + 1) + (DATAST + 1)) × tHCLK max (tWC) DATAST × tHCLK = tPWE1 For read access, DATAST must verify: DATAST (t AA + tsu(Data_NE) + tv(A_NE))/tHCLK – ADDSET – 4 Table 5 gives the meanings and values of the SRAM parameters. Using the above described formulas, the memory timings in Table 5 and the STM32F10xCDE FSMC asynchronous timings in Table 2, we have: ● Address setup time: 0x0 ● Data setup time: 0x1 3.3 Hardware connection Table 6 gives the correspondence between SRAM pins and FSMC pins and shows the GPIO configuration for each FSMC pin. In case of an 8-bit SRAM, the data/address bus is 8 bits wide and D8-D15 should not be connected to the FSMC. The unused FSMC pins can be used as general purpose I/O pins Figure 8 shows a typical connection between an STM32F10xxx microcontroller and an IS61WV51216BLL SRAM. It is an abstract from the schematic of the STM32F10xxx evaluation board: STM3210E-EVAL. Table 5. IS61WV51216BL SRAM timings Symbols Parameter Value Unit tWC Write cycle time 12 ns tRC Read cycle time 12 ns tPWE1 Write Enable low pulse width 8 ns tAA Address access time 12 ns Table 6. IS61WV51216BLL signal to FSMC pin correspondence Memory signals FSMC signals Pin / Port assignment Pin / Port configuration Signal description A0-A18 A0-A18 Port F/Port G/Port E/Port D AF push-pull Address A0-A18 I/O0-I/O15 D0-D15 Port D/Port E AF push-pull Data D0-D15 CE NE3 PG10 AF push-pull Chip Enable OE NOE PD4 AF push-pull Output Enable WE NWE PD5 AF push-pull Write Enable LB NBL0 PE0 AF push-pull Lower byte control UB NBL1 PE1 AF push-pull Upper byte control |
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