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AN2784 датащи(PDF) 18 Page - STMicroelectronics

номер детали AN2784
подробное описание детали  Using the high-density STM32F10xxx FSMC peripheral to drive external memories
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производитель  STMICROELECTRONICS [STMicroelectronics]
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Interfacing with a nonmultiplexed, asynchronous 16-bit SRAM
AN2784
18/31
Doc ID 14779 Rev 4
Hence the following equations:
((ADDSET + 1) + (DATAST + 1)) × tHCLK max (tWC)
DATAST × tHCLK = tPWE1
For read access, DATAST must verify:
DATAST
(t
AA + tsu(Data_NE) + tv(A_NE))/tHCLK – ADDSET – 4
Table 5 gives the meanings and values of the SRAM parameters.
Using the above described formulas, the memory timings in Table 5 and the
STM32F10xCDE FSMC asynchronous timings in Table 2, we have:
Address setup time: 0x0
Data setup time: 0x1
3.3
Hardware connection
Table 6 gives the correspondence between SRAM pins and FSMC pins and shows the
GPIO configuration for each FSMC pin.
In case of an 8-bit SRAM, the data/address bus is 8 bits wide and D8-D15 should not be
connected to the FSMC. The unused FSMC pins can be used as general purpose I/O pins
Figure 8 shows a typical connection between an STM32F10xxx microcontroller and an
IS61WV51216BLL SRAM. It is an abstract from the schematic of the STM32F10xxx
evaluation board: STM3210E-EVAL.
Table 5.
IS61WV51216BL SRAM timings
Symbols
Parameter
Value
Unit
tWC
Write cycle time
12
ns
tRC
Read cycle time
12
ns
tPWE1
Write Enable low pulse width
8
ns
tAA
Address access time
12
ns
Table 6.
IS61WV51216BLL signal to FSMC pin correspondence
Memory
signals
FSMC
signals
Pin / Port assignment
Pin / Port
configuration
Signal description
A0-A18
A0-A18
Port F/Port G/Port E/Port D
AF push-pull
Address A0-A18
I/O0-I/O15
D0-D15
Port D/Port E
AF push-pull
Data D0-D15
CE
NE3
PG10
AF push-pull
Chip Enable
OE
NOE
PD4
AF push-pull
Output Enable
WE
NWE
PD5
AF push-pull
Write Enable
LB
NBL0
PE0
AF push-pull
Lower byte control
UB
NBL1
PE1
AF push-pull
Upper byte control



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