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AN2784 датащи(PDF) 11 Page - STMicroelectronics

номер детали AN2784
подробное описание детали  Using the high-density STM32F10xxx FSMC peripheral to drive external memories
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производитель  STMICROELECTRONICS [STMicroelectronics]
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AN2784
Interfacing with a nonmultiplexed, asynchronous 16-bit NOR Flash memory
Doc ID 14779 Rev 4
11/31
2.1.1
Typical use of the FSMC to interface with a NOR Flash memory
The STM32F10xxx FSMC has four different banks of 64 Mbytes to support NOR Flash
memories/PSRAMs and similar external memories.
The external memories share the address, data and control signals with the controller. Each
external device is accessed by means of a unique Chip Select signal, but the FSMC
performs only one access at a time to an external device.
Each bank is configured by means of dedicated registers. Configuration includes the
different features and the timing parameters.
In this application note, the M29W128FL memory is used as a reference. The M29W128FL
memory is a 16-bit, asynchronous, nonmultiplexed NOR Flash memory. Based on these
data, the FSMC is configured as follows:
Bank 2 is selected to support the NOR Flash memory device:
●
Bank 2 is enabled: BCR2_MBKEN bit set to ‘1’
●
Memory type is NOR: BCR2_MTYP is set to ‘10’ to select the NOR memory type
●
Databus width is 16-bit: BCR2_MWID is set to ‘01’ to select the 16-bit width
●
It is a nonmultiplexed memory: BCR2_MUXEN is reset.
All remaining parameters must be kept cleared.
2.2
Timing computation
As described above, for asynchronous NOR Flash-like memories, there are different
possible access protocols. The first step is therefore to define the kind of protocol that
should be used with the specific memory. The choice depends on the different control
signals and the behavior of the memory during read and write transactions.
In the case of an asynchronous NOR Flash memory, the Mode 2 protocol will be used. If the
used memory can provide an NADV signal, the Extended ModeB protocol should be used.
With the M29W129FL, we will use the Mode2 protocol. We will therefore not use any
extended mode and the timings will be the same for read and write operations. In this case,
the NOR memory controller needs two timing parameters: ADDSET and DATAST.
These parameters are computed according to the NOR Flash memory characteristics and
according to the HCLK clock of the STM32F10xxx.
Based on the NOR Flash memory access timings illustrated in Figure 3 and Figure 4, the
following equations are found:
●
The write or read access time is the time between the falling edge and the rising edge
of the memory Chip Select signal. This time is computed as a function of the FSMC
timing parameter:
((ADDSET + 1) + (DATAST + 1)) × tHCLK Write access time
●
In write operations, the DATAST parameter is measured between the falling edge and
the rising edge of the write signal as follows:
tWP = DATAST × tHCLK Write Enable signal low to high



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