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AN3027 датащи(PDF) 16 Page - STMicroelectronics |
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AN3027 датащи(HTML) 16 Page - STMicroelectronics |
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16 / 41 page ![]() Designing a TM PFC AN3027 16/41 Doc ID 16134 Rev 4 The dependence on the input voltage is shown in Figure 5. On the right, Figure 6 represents the drain voltage waveform: the MOSFET turn-on occurs just on the valley because the inductor has depleted its energy and therefore can resonate with the drain capacitance. Details are in the section concerning the ZCD pin description. It is clear that for an input voltage theoretically lower than half of the output voltage, the resonance ideally should reach zero, achieving zero-voltage operation, therefore there are no losses relevant to this edge. For input voltage corresponding to a positive value of the valley, capacitive losses are generated. However, the MOSFET turn-on always occurs at the minimum voltage of the resonance and therefore the losses are minimized. In practice it is possible to estimate the total switching and capacitive losses by solving the integral of the switching frequency depending on sin( θ) on the half-line cycle. The total losses of the input mains voltage are the sum of the three previous loss functions Equation 26, Equation 28 and Equation 30 respectively multiplied for the MOSFET parameters: Equation 33 Figure 7 shows the trend of the total losses from Equation 33 on the line voltage for the selected MOSFET STF7NM50N. Capacitive losses are dominant at high mains voltage and the major contribution came from the conduction losses at low and medium mains voltage. Figure 5. θ1 and θ2 dependence on input voltage Figure 6. Capacitive losses ) VAC ( P C ) VAC ( P C t ) VAC ( P R ) VAC ( P cap d sw d 2 fall cond ) on ( DS loss ′ ⋅ + ′ ⋅ + ′ ⋅ = |
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