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STM32F101ZC датащи(PDF) 38 Page - STMicroelectronics

номер детали STM32F101ZC
подробное описание детали  High-density access line, ARM-based 32-bit MCU
PDF  112 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32F101ZC датащи(HTML) 38 Page - STMicroelectronics

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Electrical characteristics
STM32F101xC, STM32F101xD, STM32F101xE
38/112
Doc ID 14610 Rev 8
5.3
Operating conditions
5.3.1
General operating conditions
5.3.2
Operating conditions at power-up / power-down
The parameters given in Table 11 are derived from tests performed under the ambient
temperature condition summarized in Table 10.
Table 10.
General operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
fHCLK
Internal AHB clock frequency
0
36
MHz
fPCLK1
Internal APB1 clock frequency
0
36
fPCLK2
Internal APB2 clock frequency
0
36
VDD
Standard operating voltage
2
3.6
V
VDDA
(1)
1.
When the ADC is used, refer to Table 55: ADC characteristics.
Analog operating voltage
(ADC not used)
Must be the same potential
as VDD
(2)
2.
It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
23.6
V
Analog operating voltage
(ADC used)
2.4
3.6
VBAT
Backup operating voltage
1.8
3.6
V
P
D
Power dissipation at TA =
85 °C(3)
3.
If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 104).
LQFP144
666
mW
LQFP100
434
LQFP64
444
TA
Ambient temperature
Maximum power dissipation
–40
85
°C
Low power dissipation(4)
4.
In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 104).
–40
105
°C
TJ
Junction temperature range
–40
105
°C
Table 11.
Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
0
µs/V
VDD fall time rate
20



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