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STM32F101ZC датащи(PDF) 38 Page - STMicroelectronics |
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STM32F101ZC датащи(HTML) 38 Page - STMicroelectronics |
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38 / 112 page ![]() Electrical characteristics STM32F101xC, STM32F101xD, STM32F101xE 38/112 Doc ID 14610 Rev 8 5.3 Operating conditions 5.3.1 General operating conditions 5.3.2 Operating conditions at power-up / power-down The parameters given in Table 11 are derived from tests performed under the ambient temperature condition summarized in Table 10. Table 10. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency 0 36 MHz fPCLK1 Internal APB1 clock frequency 0 36 fPCLK2 Internal APB2 clock frequency 0 36 VDD Standard operating voltage 2 3.6 V VDDA (1) 1. When the ADC is used, refer to Table 55: ADC characteristics. Analog operating voltage (ADC not used) Must be the same potential as VDD (2) 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation. 23.6 V Analog operating voltage (ADC used) 2.4 3.6 VBAT Backup operating voltage 1.8 3.6 V P D Power dissipation at TA = 85 °C(3) 3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal characteristics on page 104). LQFP144 666 mW LQFP100 434 LQFP64 444 TA Ambient temperature Maximum power dissipation –40 85 °C Low power dissipation(4) 4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Table 6.2: Thermal characteristics on page 104). –40 105 °C TJ Junction temperature range –40 105 °C Table 11. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate 0 ∞ µs/V VDD fall time rate 20 ∞ |
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