W25X05CLZPIG datasheet(29/51 Pages) WINBOND

номер детали	W25X05CLZPIG

подробное описание детали	2.5 / 3 / 3.3 V 512K / 1M / 2M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI

PDF	51 Pages

Scroll/Zoom	100%

производитель	WINBOND [Winbond]

домашняя страница	http://www.winbond.com

Logo

29 / 51 page

W25X05CL/10CL/20CL

Publication Release Date: March 23, 2012

- 29 -

Revision B

8.2.19

Power-down (B9h)

Although the standby current during normal operation is relatively low, standby current can be further

reduced with the Power-down instruction. The lower power consumption makes the Power-down

instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC

Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code

“B9h” as shown in figure 19.

The /CS pin must be driven high after the eighth bit has been latched. If this is not done th e Power-

down instruction will not be executed. After /CS is driven high, the power-down state will entered

within the time duration of tDP (See AC Characteristics). While in the power-down state only the

Release from Power-down / Device ID instruction, which restores the device to normal operation, will

be recognized. All other instructions are ignored. This includes the Read Status Register instruction,

which is always available during normal operation. Ignoring all but one instruction makes the Power

Down state a useful condition for securing maximum write protection. The device always powers -up in

the normal operation with the standby current of ICC1.

Figure 19. Deep Power-down Instruction Sequence Diagram

/CS

CLK

(IO

Mode 0

Mode 3

Instruction (B9h)

Mode 0

Mode 3

tDP

Power-down current

Stand-by current

W25X05CLZPIG датащи(PDF) 29 Page - Winbond