MCP6S92 datasheet(4/40 Pages) MICROCHIP

4 / 40 page

 2004 Microchip Technology Inc.

DS21908A-page 4

MCP6S91/2/3

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VREF = VSS, G = +1 V/V,

Input = CH0 = (0.3V)/G, CH1 = 0.3V, RL =10 kΩ to VDD/2, CL = 60 pF, SI and SCK are tied low and CS is tied high.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Frequency Response

-3 dB Bandwidth

—

1 to 18

—

MHz

All gains; VOUT < 100 mVP-P (Note 1)

Gain Peaking

GPK

—

All gains; VOUT < 100 mVP-P

Total Harmonic Distortion plus Noise

f = 20 kHz, G = +1 V/V

THD+N

—

0.0011

—

VOUT = 1.5V ± 1.0 VPK, VDD = 5.0V,

BW = 80 kHz, RL = 10 kΩ to 1.5V

f = 20 kHz, G = +1 V/V

THD+N

—

0.0089

—

VOUT = 2.5V ± 1.0 VPK, VDD = 5.0V,

BW = 80 kHz

f = 20 kHz, G = +4 V/V

THD+N

—

0.0045

—

VOUT = 2.5V ± 1.0 VPK, VDD = 5.0V,

BW = 80 kHz

f = 20 kHz, G = +16 V/V

THD+N

—

0.028

—

VOUT = 2.5V ± 1.0 VPK, VDD = 5.0V,

BW = 80 kHz

Step Response

Slew Rate

—

4.0

—

V/µs

G = 1, 2

—

V/µs

G = 4, 5, 8, 10

—

V/µs

G = 16, 32

Noise

Input Noise Voltage

Eni

—4.5

—

µVP-P

f = 0.1 Hz to 10 Hz (Note 2)

—

f = 0.1 Hz to 200 kHz (Note 2)

Input Noise Voltage Density

eni

—10

—

nV/

√Hz f = 10 kHz (Note 2)

Input Noise Current Density

ini

—4

—

fA/

√Hz f = 10 kHz

Note

See Table 4-1 for a list of typical numbers and Figure 2-25 for the frequency response versus gain.

Eni and eni include ladder resistance noise. See Figure 2-12 for eni versus G data.

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