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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L052C6 датащи(PDF) 71 Page - STMicroelectronics |
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STM8L052C6 датащи(HTML) 71 Page - STMicroelectronics |
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71 / 102 page  STM8L052C6 Electrical parameters Doc ID 023331 Rev 1 71/102 Low speed internal RC oscillator (LSI) In the following table, data is based on characterization results, not tested in production. Figure 15. Typical LSI frequency vs. VDD Table 31. LSI oscillator characteristics Symbol Parameter (1) 1. VDD = 1.8 V to 3.6 V, TA = -40 to 85 °C unless otherwise specified. Conditions(1) Min Typ Max Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time 200(2) 2. Guaranteed by design, not tested in production. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤ TA ≤ 85 °C -12 11 % 25 27 29 31 33 35 37 39 41 43 45 1.8 2.1 2.6 3.1 3.6 VDD [V] -40°C 25°C 85°C ai18219V2 |
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