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STM8L052C6 датащи(PDF) 59 Page - STMicroelectronics |
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STM8L052C6 датащи(HTML) 59 Page - STMicroelectronics |
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59 / 102 page ![]() STM8L052C6 Electrical parameters Doc ID 023331 Rev 1 59/102 Figure 8. Typ. IDD(RUN) vs. VDD,fCPU = 16 MHz 1. Typical current consumption measured with code executed from RAM 4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 28. 5. Tested in production. 6. The run from Flash consumption can be approximated with the linear formula: IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA 7. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 29. 1.50 1.75 2.00 2.25 2.50 2.75 3.00 1.8 2.1 2.6 3.1 3.6 VDD [V] -40°C 25°C 85°C ai18213V2 |
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