MPC8349EVVALDB datasheet(15/87 Pages) FREESCALE

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MPC8349EA PowerQUICC II Pro Integrated Host Processor Hardware Specifications, Rev. 13

Freescale Semiconductor

DDR and DDR2 SDRAM

Table 11 lists the PLL and DLL lock times.

DDR and DDR2 SDRAM

This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the

MPC8349EA. Note that DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V.

The AC electrical specifications are the same for DDR and DRR2 SDRAM.

NOTE

The information in this document is accurate for revision 3.0 silicon and

later. For information on revision 1.1 silicon and earlier versions see the

MPC8349E PowerQUICC II Pro Integrated Host Processor Hardware

Specifications. See Section 22.1, “Part Numbers Fully Addressed by This

Document,” for silicon revision level determination.

6.1

DDR and DDR2 SDRAM DC Electrical Characteristics

Table 12 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the

MPC8349EA when GVDD(typ) = 1.8 V.

Table 11. PLL and DLL Lock Times

Parameter/Condition

Min

Max

Unit

Notes

PLL lock times

—

100

μs—

DLL lock times

7680

122,880

csb_clk cycles

1, 2

Notes:

1. DLL lock times are a function of the ratio between the output clock and the coherency system bus clock (csb_clk). A 2:1 ratio

results in the minimum and an 8:1 ratio results in the maximum.

2. The csb_clk is determined by the CLKIN and system PLL ratio. See Section 19, “Clocking.”

Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V

Parameter/Condition

Symbol

Min

Max

Unit

Notes

I/O supply voltage

GVDD

1.71

1.89

I/O reference voltage

MVREF

0.49

× GV

0.51

× GV

I/O termination voltage

VTT

MVREF –0.04

MVREF +0.04

Input high voltage

VIH

MVREF + 0.125

GVDD +0.3

—

Input low voltage

VIL

–0.3

MVREF –0.125

—

Output leakage current

IOZ

–9.9

9.9

μA4

Output high current (VOUT = 1.420 V)

IOH

–13.4

—

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