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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MPC5675K датащи(PDF) 88 Page - Freescale Semiconductor, Inc |
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MPC5675K датащи(HTML) 88 Page - Freescale Semiconductor, Inc |
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88 / 140 page  MPC5675K Microcontroller Data Sheet, Rev. 4 Preliminary—Subject to Change Without Notice Electrical characteristics Freescale Semiconductor 88 3.15.2 Read access timing 3.15.3 Write access timing Table 27. Flash module life No. Symbol Parameter Condition Value Unit Min Typ1 NOTES: 1 Typical endurance is evaluated at 25 oC. Product qualification is performed to the minimum specification. For additional information on the Freescale definition of Typical Endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory. Max 1a P/E CC Number of program/erase cycles per block for over the operating temperature range (TJ) 16 KB blocks 100,000 — — cycles 1b 32 KB and 64 KB blocks 10,000 100,000 — cycles 1c 128 KB blocks 1,000 100,000 — cycles 2 Retention CC Minimum data retention at 85 °C average ambient temperature2 2 Ambient temperature averaged over duration of application, not to exceed product operating temperature range. Blocks with 0–1,000 P/E cycles 20 — — years Blocks with 1,001–10,000 P/E cycles 10 — — years Blocks with 10,001–100,000 P/E cycles 5— — years Table 28. Code flash read access timing No. Symbol Parameter Condition Value Unit Max 2fREAD CC Maximum frequency for Flash reading (system clock frequency SYS_CLK) 4 wait states 90 MHz 3 3 wait states 60 MHz Table 29. Data flash read access timing No. Symbol Parameter Condition Value Unit Max 2fREAD CC Maximum frequency for Flash reading (system clock frequency SYS_CLK) 12 wait states 90 MHz 3 8 wait states 60 MHz Table 30. Code flash write access timing No. Symbol Parameter Condition Value Unit Max 2fWRITE CC Maximum frequency for Flash writing (system clock frequency SYS_CLK) TBD 90 MHz 3 TBD 60 MHz |
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