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VND670SP датащи(PDF) 13 Page - STMicroelectronics

номер детали VND670SP
подробное описание детали  Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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Application information
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3.2
Fault conditions
In case of a fault conditions the DIAGX/ENX pin is considered as an output pin by the device.
The fault conditions are:
overtemperature on one or both high-sides;
short to battery condition on the output (saturation detection on the external connected
Power MOSFET).
Possible origins of fault conditions may be:
OUTA is shorted to ground ---> overtemperature detection on high-side A.
OUTA is shorted to VCC ---> external Power MOSFET saturation detection (driven by
GATEA).
When a fault condition is detected, the user can know which power element is in fault by
monitoring the INA, INB, DIAGA/ENA and DIAGB/ENB pins.
In any case, when a fault is detected, the faulty half bridge is latched off. To turn-on the
respective output (GATEX or OUTX) again, the input signal must rise from low to high level.
3.3
Test mode
The PWM pin allows to test the load connection between two half-bridges. In the test mode
(Vpwm=-2V) the external Power Mos gate drivers are disabled. The INA or INB inputs allow to
turn-on the high-side A or B, respectively, in order to connect one side of the load at VCC
voltage. The check of the voltage on the other side of the load allow to verify the continuity of
the load connection. In case of load disconnection the DIADX/ENX pin corresponding to the
faulty output is pulled down.
Table 12.
Truth table in fault conditions (detected on OUTA)
INA
INB
DIAGA/ENA DIAGB/ENB
OUTA
OUTB
GATEA
GATEB
11
0
1
Open
H
L
L
1
0
0
1
Open
Open
L
L
01
0
1
Open
H
L
L
0
0
0
1
Open
Open
L
L
X
X
0
0
Open
Open
L
L
1
X
0
0
Open
Open
L
L
0
X
0
0
Open
Open
L
L
X1
0
1
Open
H
L
L
X
0
0
1
Open
Open
L
L



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