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VND670SP датащи(PDF) 7 Page - STMicroelectronics

номер детали VND670SP
подробное описание детали  Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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VND670SP датащи(HTML) 7 Page - STMicroelectronics

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VND670SP
Electrical specifications
7/20
2.2
Thermal data
2.3
Electrical characteristics
Values specified in this section are for 9V < VCC < 18V; -40°C < Tj < 150°C, unless
otherwise stated.
Table 4.
Thermal data (per island)
Symbol
Parameter
Max. value
Unit
Rthj-case
Thermal resistance junction-case
1.4
°C/W
Rthj-amb
Thermal resistance junction-ambient
50(1)
1.
When mounted using the recommended pad size on FR-4 board (see AN515 Application Note).
°C/W
Table 5.
Power
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VCC
Operating supply voltage
5.5
36
V
RON
On-state resistance
ILOAD = 12A
ILOAD = 12A
Tj = 25°C
26
50
30
m
Ω
m
Ω
Is
Supply current
On-state
Off-state
15
40
mA
µA
Vgate
Gate output voltage
5.0
8.5
V
Vgs,cl
Gate output clamp voltage
Igs= - 1 mA
6.0
6.8
8.0
V
Table 6.
Switching (VCC = 13V, RLOAD = 1.1Ω)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
tD(on)
Turn-on delay time
Input rise time < 1µs
(see Figure 4)
50
150
µs
tD(off)
Turn-off delay time
45
135
µs
tr
Output voltage rise time
50
150
µs
tf
Output voltage fall time
40
120
µs
(dVOUT/dt)on Turn-on voltage slope
160
500
V
/ ms
(dVOUT/dt)off Turn-off voltage slope
230
1200
V
/ ms
tdong
Vgsturn-on delay time
C1=4.7nF
Break to ground
configuration
(see Figure 5)
0.5
2
µs
trg
Vgs rise time
2.6
10
µs
tdoffg
Vgsturn-off delay time
1.0
5.0
µs
tfg
Vgs fall time
2.2
10
µs
tdel
External MOSFET
turn-on dead time
(see Figure 6)
600
1800
µs



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