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VND670SP датащи(PDF) 6 Page - STMicroelectronics

номер детали VND670SP
подробное описание детали  Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Electrical specifications
VND670SP
6/20
2
Electrical specifications
Figure 3.
Current and voltage conventions
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
VCC
INA
GND
ICC
IOUTA
IINA
VINA
VCC
VOUTA
IgsA
VOUTB
DIAGA/ENA
IENA
IgsB
IGND
IOUTB
INB
IINB
DIAGB/ENB
IENB
VENB
VENA
VINB
VgsA
VgsB
OUTA
OUTB
PWM
GATEA
GATEB
Ipw
Vpw
Table 3.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
Supply voltage
-0.3..40
V
Imax1
Maximum output current (continuous)
15
A
Imax2
Maximum output current (250ms pulse duration)
20
A
IR
Reverse DC output current
- 15
A
IIN
Input current
+/- 10
mA
IEN
Enable pin current
+/- 10
mA
Ipw
PWM pin current
+/- 10
mA
Igs
Output gate current
+/- 20
mA
VESD
Electrostatic discharge ( R = 1.5K
Ω; C = 100pF)
2000
V
Tj
Junction operating temperature
- 40 to 150
°C
Tstg
Storage temperature
- 55 to 150
°C



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