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VND670SP датащи(PDF) 12 Page - STMicroelectronics

номер детали VND670SP
подробное описание детали  Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VND670SP датащи(HTML) 12 Page - STMicroelectronics

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Application information
VND670SP
12/20
Figure 8.
Typical application circuit for a 20 KHz PWM operation
Note:
1
Reverse battery protection: series relay in VCC line: Rgnd = 0 Ohms; series fuse in VCC line
with antiparallel diode between ground and VCC: Rgnd=10 Ohms.
3.1
Normal operating conditions
Note:
1
In normal operating conditions the DIAGX/ENX pin is considered as an input pin by the
device. This pin must be externally pulled high.
2
PWM pin usage:
In all cases, a “0” on the PWM pin will turn-off both GATEA and GATEB outputs. When PWM
rises back to “1”, GATEA or GATEB turn on again depending on the input pin state.
M
UP
DOWN
OUTA
OUTB
GATEB
GATEA
External
VND670SP
VCC
PWM
Power Mos A
External
Power Mos B
DIAGB/ENB
R1
+5V
Rprot
Rprot
INB
1K
1K
Rprot
INA
1K
DIAGA/ENA
R1
+5V
Rprot
1K
Rprot
1K
Rgnd(*)
D1
D2
27
Ω
27
Ω
Table 11.
Truth table in normal operating conditions
INA
INB
DIAGA/ENA
DIAGB/ENB
OUTA
OUTB
GATEA GATEB
Comment
1
1
1
1
H
H
L
L
Brake to VCC
1
0
1
1
H
L
L
H
Clockwise
0
1
1
1
L
H
H
L
Counter cw
0
0
1
1
L
L
H
H
Brake to GND
X
X
0
0
L
L
L
L
Stand by
1X
1
0
H
L
L
L
HSA only
0X
1
0
L
L
H
L
MOSA only
X1
0
1
L
H
L
L
HSB only
X0
0
1
L
L
L
H
MOSB only



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