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VND670SP датащи(PDF) 11 Page - STMicroelectronics

номер детали VND670SP
подробное описание детали  Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VND670SP датащи(HTML) 11 Page - STMicroelectronics

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VND670SP
Application information
11/20
3
Application information
Figure 7.
Typical application circuit for DC to 10 KHz PWM operation
Note:
1
Reverse battery protection: series relay in VCC line: Rgnd=0 Ohms; series fuse in VCC line
with antiparallel diode between ground and VCC: Rgnd=10 Ohms.
2
Layout hints: the connection between GND pin of the VN670SP and the Power MOSFET
SOURCE connections should be kept short enough to ensure that the dynamic difference
between these two points never exceed 1V for the bridge to operate properly.
M
UP
DOWN
OUTA
OUTB
GATEB
GATEA
External Power Mos A
External Power Mos B
VND670SP
DIAGA/ENA
R1
+5V
VCC
PWM
GND
Rgnd(*)
Rprot
Rprot
Rprot
INA
1K
1K
1K
DIAGB/ENB
R1
+5V
Rprot
Rprot
INB
1K
1K



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