HAL855UT-K datasheet(25/42 Pages) MICRONAS

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DATA SHEET

HAL855

Micronas

Nov. 26, 2008; DSH000149_003EN

3.7. Magnetic Characteristics

at TJ = −40 °C to +170 °C, VDD = 4.5 V to 14 V, after programming and locking of the device,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Definition of Sensitivity Errors over Temperature

A ideal Hall-effect device would not be affected by

temperature. Its temperature compensation would

allow to compensate for a linear temperature coeffi-

cient

IDEAL of a permanent magnet.

The temperature dependence of the sensitivity of a

real sensor is not ideally linear. Its linear temperature

coefficient

α is determined by a linear least square fit.

Micronas

specifies

two

sensitivity

errors

over

temperature:

1. the error of the linear temperature coefficient

α:

2. the maximum residual error over temperature

resulting from the least square fit, i.e., the integral

non-linearity of the temperature dependence of sen-

sitivity:

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

BOffset

Magnetic Offset

−10

B = 0 mT, TJ = 25 °C

ΔB

Offset/ΔT

Magnetic Offset Change

due to TJ

−15

μT/K

B = 0 mT

Δα

Error of Linear Temperature

Coefficient of Magnetic Sensitivity

−400

400

ppm/K

TC and TCSQ suitable for the

application

NLSB(T)

Integral Non-Linearity of

Temperature Dependence of

Sensitivity

−

α < 2000 ppm/K

α >= 2000 ppm/K

TC and TCSQ suitable for the

application

BHysteresis

Magnetic Hysteresis

−20

μT

Range = 30 mT, Filter = 500 Hz

S0 and α are the fit parameters, res(T) the residual error.

IDEA L

IDEAL

–

()

–

()

res T

()

Δα

α α

IDEAL

–

SB T

()

max

T res T

()

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