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HAL855UT-K датащи(PDF) 7 Page - Micronas |
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HAL855UT-K датащи(HTML) 7 Page - Micronas |
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7 / 42 page ![]() DATA SHEET HAL855 Micronas Nov. 26, 2008; DSH000149_003EN 7 2. Functional Description 2.1. General Function The HAL855 is a monolithic integrated circuit which provides an output signal proportional to the magnetic flux through the Hall plate. The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM regis- ters, converted to the different digital output formats (PWM and Biphase-M serial protocol) and provided by an open-drain output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 9. The setting of the LOCK register disables the program- ming of the EEPROM memory for all time. This regis- ter cannot be reset. As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulat- ing the supply voltage (see Fig. 2–1). After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The output is switched off during the communication. When no command is detected or processed and the supply voltage is within the recommended operating range the PWM or Biphase-M output is enabled. It is possible to program several sensors individually if they are in parallel to the same supply and ground line. The selection of each sensor is done via its output pin. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redun- dant EEPROM cells. In addition, the sensor IC is equipped with devices for overvoltage and reverse- voltage protection at all pins. Fig. 2–1: Programming with VDD modulation Fig. 2–2: HAL855 block diagram 5 6 7 8 HAL 855 VDD GND OUT 0 VPull-up Temperature Oscillator Switched A/D Digital OUT VDD GND EEPROM Memory Bandgap Reference Dependent Bias Hall Plate Converter Signal Processing Supply Lock Level Control Open-Drain Output HAL 855 Detection |
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