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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HAL855UT-K датащи(PDF) 34 Page - Micronas |
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HAL855UT-K датащи(HTML) 34 Page - Micronas |
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34 / 42 page  HAL855 DATA SHEET 34 Nov. 26, 2008; DSH000149_003EN Micronas Table 5–1: Telegram parameters (All voltages are referenced to GND.) Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions VDDL Supply Voltage for Low Level during Programming 15 5.5 6V VDDH Supply Voltage for High Level during Programming 1 6.8 8.0 8.5 V tr Rise Time 1 −− 0.05 ms tf Fall Time 1 −− 0.05 ms tp0 Bit Time on VDD 1 1.7 1.75 1.8 ms tp0 is defined through the Sync Bit tpOUT Bit Time on Output Pin 3 2 3 4 ms tpOUT is defined through the Acknowledge Bit tp1 Voltage Change for Logical 1 1, 3 50 65 80 % % of tp0 or tpOUT tPROG Programming Time for EEPROM 1 95 100 105 ms VDD,PROG Supply Voltage during Programming 1 4.9 5 5.1 V trp Rise Time of Charging Pulse 1 0.2 0.5 1 ms tfp Fall Time of Charging Pulse 1 0 − 1ms tw Delay Time of Charging Pulse after Acknowledge 10.5 0.7 1ms Vact Voltage for an Activate Pulse 3 0 0 0.5 V tact Duration of an Activate Pulse 3 0.05 0.1 − ms |
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