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MPC5604B датащи(PDF) 33 Page - Freescale Semiconductor, Inc

номер детали MPC5604B
подробное описание детали  MPC5604B/C Microcontroller Data Sheet
PDF  72 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPC5604B датащи(HTML) 33 Page - Freescale Semiconductor, Inc

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Electrical characteristics
MPC5604B/C Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
33
4.12.3
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine
its performance in terms of electrical sensitivity.
4.12.3.1
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according
to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This
test conforms to the AEC-Q100-002/-003/-011 standard.
4.12.3.2
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up performance:
A supply overvoltage is applied to each power supply pin.
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
4.13
Fast external crystal oscillator (4 to 16 MHz) electrical
characteristics
The device provides an oscillator/resonator driver. Figure 10 describes a simple model of the internal oscillator driver and
provides an example of a connection for an oscillator or a resonator.
Table 29. ESD absolute maximum ratings1 2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Symbol
C
Ratings
Conditions
Class
Max value
Unit
VESD(HBM) CC T Electrostatic discharge voltage
(Human Body Model)
TA = 25 °C
conforming to AEC-Q100-002
H1C
2000
V
VESD(MM) CC T Electrostatic discharge voltage
(Machine Model)
TA = 25 °C
conforming to AEC-Q100-003
M2
200
VESD(CDM) CC T Electrostatic discharge voltage
(Charged Device Model)
TA = 25 °C
conforming to AEC-Q100-011
C3A
500
750 (corners)
Table 30. Latch-up results
Symbol
C
Parameter
Conditions
Class
LU
CC
T Static latch-up class
TA = 125 °C
conforming to JESD 78
II level A



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