RA4M2_V01 datasheet(73/93 Pages) RENESAS

номер детали	RA4M2

подробное описание детали	RA4M2 Group

PDF	93 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

Logo

73 / 93 page

VCC

tVOFFBATT

VDETBATT

VBATTSW

VBATT

VCC supply

VBATT supply

VCC supply

Backup power

area

Figure 2.60

Battery backup function characteristics

VBATT

tBATTOFF

Vbattldet

VBATTMON

tBATTdet

VBATTMNSEL

td(E-A)

Figure 2.61

Battery backup function characteristics

2.11

CTSU Characteristics

Table 2.43

CTSU characteristics

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

External capacitance connected to TSCAP pin

Ctscap

—

TS pin capacitive load

Cbase

—

Permissible output high current

ΣIoH

—

-40

When the mutual capacitance

method is applied

2.12

Flash Memory Characteristics

2.12.1

Code Flash Memory Characteristics

Table 2.44

Code flash memory characteristics (1 of 2)

Conditions: Program or erase: FCLK = 4 to 50 MHz

Read: FCLK ≤ 50 MHz

Parameter

Symbol

FCLK = 4 MHz

20 MHz ≤ FCLK ≤ 50 MHz

Unit

Test

conditions

Min

Typ*6 Max Min

Typ*6

Max

Programming time

NPEC ≤ 100 times

128-byte

tP128

—

0.75

13.2 —

0.34

6.0

8-KB

tP8K

—

176

—

32-KB

tP32K

—

194

704

—

320

RA4M2 Datasheet

2. Electrical Characteristics

R01DS0367EJ0140 Rev.1.40

May 9, 2025

Page 73 of 93

RA4M2 датащи(PDF) 73 Page - Renesas Technology Corp

RA4M2 датащи(HTML) 73 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93

датащи скачать

ссылки URL