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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L99DZ80EP датащи(PDF) 41 Page - STMicroelectronics |
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L99DZ80EP датащи(HTML) 41 Page - STMicroelectronics |
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41 / 68 page  DocID18260 Rev 6 41/68 L99DZ80EP Application information 67 Figure 18. H-bridge open-load detection (short to ground detected) Figure 19. H-bridge open-load detection with H-OLTH HIGH = ‘1’ (short to VS detected) 3.20 Programmable cross current protection Both external MOSFET transistors in one half-bridge are disabled for the cross-current protection time (tCCP) after one MOSFET inside this halfbridge is switched off to prevent current flowing from the high-side to the low-side MOSFET. The cross current protection time tCCP can be programmed by SPI using bits COPT<3:0>. |
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